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| SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features * Ultra-small package * Low voltage operation * Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz * High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz * High stability * Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25C) * Drain to source voltage VDSX 6 * Gate 1 to source voltage VG1S -4 * Gate 2 to source voltage VG2S -4 * Drain current ID 18 * Allowable power dissipation PD 100 * Channel temperature Tch 125 * Storage temperature Tstg -55 to +150 M-281 V V V mA mW C C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E97144-PS SGM2013N Electrical Characteristics Item Gate 1 to source current Symbol IG1SS Conditions VG1S = -3V VG2S = 0V VDS = 0V VG2S = -3V VG1S = 0V VDS = 0V VDS = 2V VG1S = 0V VG2S = 0V VDS = 2V ID = 100A VG2S = 0V VDS = 2V ID = 100A VG1S = 0V VDS = 2V ID = 2mA VG2S = 0.5V f = 1kHz VDS = 2V ID = 2mA VG2S = 0.5V f = 1MHz VDS = 2V ID = 2mA VG2S = 0.5V f = 900MHz Min. Typ. (Ta = 25C) Max. -4 Unit A Gate 2 to source current IG2SS -4 A Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage IDSS VG1S (OFF) VG2S (OFF) 4 16 mA -1.5 V -1.5 V Forward transfer admittance Input capacitance Feedback capacitance Noise figure NF associated gain gm Ciss Crss NF Ga 8 11 0.55 15 1.4 1 30 2.5 ms pF fF dB dB 15 18 Typical Characteristics (Ta = 25C) ID vs. VDS 20 (VG2S = 0.5V) 16 16 20 (VDS = 2V) ID vs. VG1S ID - Drain current [mA] 12 -0.2V 8 -0.4V 4 -0.6V 0 0 1 2 3 4 5 VDS - Drain to source voltage [V] 6 -0.8V -1.0V ID - Drain current [mA] VG1S = 0V VG2S = 0.5V 12 0.25V 8 0V -0.25V 4 -0.5V -0.75V -1.0V -1.5 -1.0 -0.5 VG1S - Gate 1 to source voltage [V] 0 0 -2.0 -2- SGM2013N ID vs. VG2S 10 (VDS = 2V) 8 25 VG1S = 0V -0.2V 6 -0.4V 4 -0.6V 2 -0.8V -1.0V -1.5 -1.0 -0.5 VG2S - Gate 2 to source voltage [V] 0 (VDS = 2V) gm vs. VG1S gm - Forward transfer admittance [ms] 20 VG2S = 0.5V 15 ID - Drain current [mA] 10 0.25V 5 0V -0.25V -0.5V -0.75V -1.5 -1.0 -0.5 VG1S - Gate 1 source voltage [V] 0 0 -2.0 0 -2.0 NF, Ga vs. VG1S 5 (VDS = 2V, VG2S = 0.5V, f = 900MHz) 4 20 4 25 5 NF, Ga vs. VDS 25 20 Ga NF - Noise figure [dB] 3 15 NF - Noise figure [dB] Ga Ga - Associated gain [dB] 3 15 2 NF 1 10 2 NF 1 10 5 5 0 -1.0 0 -0.6 -0.2 -0.8 -0.4 0 VG1S - Gate 1 to source voltage [V] 0.2 0 0 2 4 1 3 VDS - Drain to source voltage [V] 5 0 NF, Ga vs. ID 5 (VDS = 2V, VG2S = 0.5V, f = 900MHz) 25 3.0 NF, Ga vs. f 30 (VDS = 2V, VG2S = 0.5V, ID = 2mA) NF min - Minimum noise figure [dB] 4 Ga - Associated gain [dB] NF - Noise figure [dB] Ga 2.0 20 3 15 1.5 15 2 NF 1 10 1.0 NFmin 0.5 10 5 5 0 0 1 2 345678 ID - Drain current [mA] 9 10 11 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f - Frequency [GHz] 0 -3- Ga - Associated gain [dB] Ga 20 2.5 25 Ga - Associated gain [dB] SGM2013N S-parameter vs. Frequency Characteristics (VDS = 2V, VG2S = 0.5V, ID = 2mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.99 0.99 0.99 0.99 0.98 0.98 0.97 0.96 0.96 0.95 0.94 0.93 0.92 0.91 0.90 0.89 0.88 0.86 0.85 ANG -4.3 -6.4 -8.5 -10.7 -12.8 -15.0 -17.2 -19.3 -21.5 -23.7 -26.0 -28.1 -30.3 -32.6 -34.9 -37.0 -39.0 -41.4 -43.6 MAG 1.01 1.01 1.01 1.01 1.01 1.01 1.01 1.01 1.01 1.00 1.00 1.00 0.99 0.99 0.99 0.98 0.98 0.97 0.97 S21 ANG 172.8 169.3 165.9 162.2 158.7 155.1 151.5 147.8 144.3 140.6 137.2 133.6 130.0 126.5 122.8 119.4 115.7 112.1 108.8 MAG 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 S12 ANG 87.0 85.4 84.7 83.0 81.9 80.3 78.9 77.8 76.9 75.8 75.0 73.8 72.9 72.8 72.5 71.5 70.9 69.7 68.6 MAG 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.97 0.97 0.96 0.96 0.96 0.96 0.96 0.96 0.95 0.95 0.95 S22 ANG -2.0 -3.1 -4.0 -5.2 -6.1 -7.2 -8.3 -9.7 -10.5 -11.7 -12.7 -13.8 -14.8 -15.9 -16.9 -18.0 -19.0 -20.0 -20.6 Noise Figure Characteristics (VDS = 2V, VG2S = 0.5V, ID = 2mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 NFmin (dB) 0.76 0.80 0.85 0.90 0.96 1.01 1.06 1.11 1.16 1.21 1.26 1.31 1.36 1.41 1.45 1.51 1.56 1.61 1.67 Gamma Optimum ANG 0.99 0.99 0.99 0.98 0.96 0.95 0.93 0.91 0.89 0.87 0.85 0.84 0.82 0.81 0.80 0.80 0.80 0.80 0.80 MAG 4.2 6.1 8.0 9.8 11.5 13.2 14.8 16.4 18.0 19.6 21.1 22.6 24.2 25.8 27.4 29.1 30.8 32.5 34.4 Rn () 85.0 83.9 82.9 81.9 80.9 79.9 79.0 78.1 77.2 76.3 75.5 74.7 74.0 73.3 72.6 71.9 71.3 70.7 70.1 -4- SGM2013N Package Outline Unit: mm M-281 2.0 0.2 1.3 3 2 1.25 0.1 0.425 (0.65) (0.65) 0.9 0.1 4 1 2.1 0.2 0 0.1 + 0.1 0.3 - 0.05 (0.65) (0.6) + 0.1 0.4 - 0.05 + 0.1 0.1 - 0.01 1.25 1 : Source 2 : Gate 1 3 : Gate 2 4 : Drain PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-281 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.1g -5- |
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